Dr.-Mack-Straße 77
90763 Fürth
Germany
The Crystal Growth Lab at the Materials Department 6 (University of Erlangen-Nürnberg) offers in conjunction with the University Knowledge and Technology Transfer Office services for industrial partners in the field of high temperature crystal growth & technology.
- R & D contracts
- growth machine design & prototyping
- process development
- support / consulting of industrial crystallization
- training of industrial staff
In particular, high temperature crystal growth and epitaxy of wide band-gap semiconductors like silicon carbide and related materials belong to the key competences.
Contact: crystals@fau.de
Lab information: Prof. Dr.-Ing. Peter Wellmann, Crystal Growth Lab, Materials Department 6, Friedrich-Alexander-Universität Erlangen-Nürnberg, Dr.-Mack-Str. 77, 90763 Fürth, Germany
FAU - Industrial Services in Crystal Growth of SiC
FAU - Industrial Services in Crystal Growth of SiC
Equipment (complete processing chain to prepare SiC wafers from SiC source materials):
- 5 x PVT reactors (physical vapor transport growth of SiC boules, T = 1600 °C ... 2500 °C)
- 1 x AIXTRON CVD reactor (chemical vapor deposition of SiC on Si)
- various ovens for crystal annealing / heat treatment
- 1 x grinding machine (preparation of boule cylinders and flats)
- 1 x multi-wire-saw
- 3 x polishing machines
- various optical, electrical and spectroscopic characterization equipment for semiconductor wafer material inspection (for more details please see "services")
OVERVIEW
- R & D contracts
- growth machine design & prototyping
- process development
- support / consulting of industrial crystallization
- training of industrial staff
in DETAIL
MACHINE TECHNOLOGY
design & prototyping of industrial growth furnaces
- 4 inch & 6 inch
process automation
in-situ growth monitoring tools
- 2D/3D low dose x-ray visualization
PROCESSING
bulk single crystal SiC growth
- 4H-/6H-SiC (3 inch, 4 inch, 6 inch in development)
- 15R-/3C-SiC (small pieces)
R & D contracts on SiC crystal growth
- SiC seed development
- doping (Al, B, N, P)
- anything special / non-standard
SiC powder synthesis & test
- validation for PVT bulk growth
3C-SiC epitaxy on Si
high temperature crystal growth
- melt temperature up to 2700°C
thin films from PVD processing and
nano-particulate ink deposition
MATERIALS TESTING
electrical
- resistance measurements
- Hall mobility & charge carrier density
optical
- photoluminescence (-topography)
- cathodoluminescence (-topography)
- optical absorption topography
- UV-VIS-IR-Absorption
- Raman spectroscopy, FTIR
structural
- scanning electron microscopy
- x-ray analysis
- surface analysis , confocal microscopy
“chemical”
- differential scanning calorimetry
- energy dispersive x-ray fluorescence
TRAINING COURSES FOR INDUSTRIAL STAFF
- crystal growth schools with theoretical and practical training
- teaching language English, on demand translation into other languages may be provided